Mini Stack: H743 Mini FC + 50A Mini ESC 4 in 1 20x20 hole

FPV Electronics > Stack & AIO

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Compact flight control and power system optimized for 2–4" micro FPV drones, combining the processing power of STM32F722 with AT32-based ESC efficiency in a 20×20mm stackable footprint.

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Mini Stack: H743 Mini FC + 50A Mini ESC 4-in-1 Technical Brief

1. Flight Controller Specifications

Parameter	Specification
MCU	STM32H743VIT6 (480MHz Cortex-M7, 1MB RAM)
IMU	ICM-42688-P (SPI, 32kHz gyro)
Blackbox	16MB Flash (8kHz logging)
Input Voltage	2–8S LiPo (7.4–25.2V)
BEC Outputs	5V@3A + 9V@2A
Connectivity	6x UART, 2x I²C, 1x Bluetooth
USB Interface	Type-C (ESD protected)
OSD Chip	AT7456E (Betaflight OSD)
Board Size	30×30mm (20×20mm mounting)
Board Weight	7.5g (with silicone gaskets)

2. 30A 4-in-1 ESC Specifications

Parameter	Specification
MCU	AT32F421K6U7 (120MHz Cortex-M4)
Continuous Current	50A/channel (120A total)
Burst Current	60A/channel (10 sec)
Protocols	DShot300/600, Proshot, PWM
Input Voltage	2–8S LiPo (7.4–33.6V)
Current Sensor	±2% accuracy shunt resistors
Switching Freq	24kHz (low-EMI design)
Board Size	30×30mm (20×20mm stackable)
Board Weight	13.8g (with thermal paste)

3. Combined Features

Power System

• Integrated PDB: Direct battery-to-ESC distribution
• Dual-Stage Filtering: LC + ferrite beads (>85% noise reduction)
• Stackable Design: Gold-plated 20×20mm M2 screw terminals

Integration

• DJI/Walksnail Support: Plug-and-play 9V BEC for HD systems
• ESC Telemetry: Real-time monitoring via UART6
• Vibration Damping: Silicone gasket isolation system :cite[1][3]

4. Safety Features

Flight Controller Protections

Protection Type	Specification	Implementation
Gyro Vibration Damping	>8kHz reduction by 85%	Silicone isolators + dynamic notch
BEC Outputs	5V3A + VBAT

ESC Protections

Protection Type	Threshold	Response Time	Trigger Condition
Hardware Overcurrent	40A per channel	≤2 seconds	MOSFET overload
Software Overcurrent	30A continuous	≤15 seconds	Sustained high current
Short Circuit	Hardware Isolation	<60μs	Phase-to-phase fault
Over-temperature	105°C (MOSFET)	<1ms	Thermal cutoff
Low Voltage Cutoff	3.0V/cell (adj.)	<50ms	Battery depletion